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Samsung M471A2K43CB1-CTD 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB

Samsung M471A2K43CB1-CTD 16GB vs SK Hynix HMA82GS6JJR8N-VK 16GB

总分
star star star star star
Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

总分
star star star star star
SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

差异 规格 评论

差异

Samsung M471A2K43CB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 15.1
    测试中的平均数值
SK Hynix HMA82GS6JJR8N-VK 16GB 需要考虑的原因
SK Hynix HMA82GS6JJR8N-VK 16GB
报告一个错误
  • 更快的写入速度，GB/s
    11.5 left arrow 11.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A2K43CB1-CTD 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 36
  • 读取速度，GB/s
    15.5 left arrow 15.1
  • 写入速度，GB/s
    11.3 left arrow 11.5
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2848 left arrow 2814

Samsung M471A2K43CB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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