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Samsung M471A2K43DB1-CWE 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Samsung M471A2K43DB1-CWE 16GB vs Crucial Technology CT16G4SFRA32A.C16FJ 16GB

总分
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Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

总分
star star star star star
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

差异 规格 评论

差异

Samsung M471A2K43DB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 42
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 9.5
    测试中的平均数值
Crucial Technology CT16G4SFRA32A.C16FJ 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A2K43DB1-CWE 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 42
  • 读取速度，GB/s
    15.8 left arrow 15.2
  • 写入速度，GB/s
    13.5 left arrow 9.5
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3075 left arrow 2597

Samsung M471A2K43DB1-CWE 16GB RAM的比较

Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CM4X16GD3200C16K2E 16GB
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G Skill Intl F3-12800CL7-4GBXM 4GB
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SK Hynix HMT325S6BFR8C-H9 2GB
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Kingston 9905403-134.A00LF 2GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
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Cortus SAS 8ATF51264AZ-2G1A1 4GB
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Kingston 9905471-001.A01LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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Corsair CMK8GX4M2C3000C16 4GB
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Patriot Memory (PDP Systems) 3000 C18 Series 16GB
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Smart Modular SF4641G8CK8IWGKSEG 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
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