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Samsung M471A2K43DB1-CWE 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB

Samsung M471A2K43DB1-CWE 16GB vs Crucial Technology CT16G4SFRA32A.C16FP 16GB

总分
star star star star star
Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

总分
star star star star star
Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

差异 规格 评论

差异

Samsung M471A2K43DB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 46
    左右 20% 更低的延时
Crucial Technology CT16G4SFRA32A.C16FP 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FP 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 13.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A2K43DB1-CWE 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 46
  • 读取速度，GB/s
    15.8 left arrow 16.1
  • 写入速度，GB/s
    13.5 left arrow 15.1
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3075 left arrow 2973

Samsung M471A2K43DB1-CWE 16GB RAM的比较

Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
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Crucial Technology CT102464BF160B.16F 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair VSA2GSDS667C4 2GB
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G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
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Crucial Technology BL8G36C16U4RL.M8FE1 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Crucial Technology BLS16G4D240FSB.16FD 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston XJV223-MIE-NX 16GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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G Skill Intl F4-2400C14-16GRK 16GB
内存RAM
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Corsair CM4X8GF2400C16N2 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston KMKYF9-HYA 8GB
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