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Samsung M471A2K43EB1-CWE 16GB
Kingston KF548C38-16 16GB

Samsung M471A2K43EB1-CWE 16GB vs Kingston KF548C38-16 16GB

总分
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

总分
star star star star star
Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

差异 规格 评论

差异

Samsung M471A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 12.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston KF548C38-16 16GB 需要考虑的原因
Kingston KF548C38-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 55
    左右 -90% 更低的延时

规格

完整的技术规格清单
Samsung M471A2K43EB1-CWE 16GB
Kingston KF548C38-16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    55 left arrow 29
  • 读取速度，GB/s
    15.8 left arrow 14.8
  • 写入速度，GB/s
    13.8 left arrow 12.8
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 38
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    2701 left arrow 3319

Samsung M471A2K43EB1-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB

Kingston KF548C38-16 16GB RAM的比较

Kingston KF560C40-16 16GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Kingston 9905630-007.A00G 8GB
Kingston 9905630-007.A00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMW64GX4M8C3200C16 8GB
Corsair CMW64GX4M8C3200C16 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM