Samsung M471A5143SB1-CRC 4GB vs Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

差异规格评论

差异

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 24

左右 -14% 更低的延时
更快的读取速度，GB/s

17.9 14.9

测试中的平均数值
更快的写入速度，GB/s

13.7 10.6

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Samsung M471A5143SB1-CRC 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 21
读取速度，GB/s

14.9 17.9
写入速度，GB/s

10.6 13.7
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2196 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

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SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Crucial Technology BLS4G4D240FSB.8FAR 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Kingston 9905701-143.A00G 16GB

Kingston 9905701-143.A00G 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMV4GX4M1A2133C15 4GB

Corsair CMV4GX4M1A2133C15 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston 9905630-039.A00G 16GB

Kingston 9905630-039.A00G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB