Samsung M471A5143SB1-CRC 4GB vs G Skill Intl F4-4000C19-8GTZ 8GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

差异规格评论

差异

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 11% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-4000C19-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-4000C19-8GTZ 8GB

报告一个错误

更快的读取速度，GB/s

17.7 14.9

测试中的平均数值
更快的写入速度，GB/s

15.1 10.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5143SB1-CRC 4GB

G Skill Intl F4-4000C19-8GTZ 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 27
读取速度，GB/s

14.9 17.7
写入速度，GB/s

10.6 15.1
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2196 3491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5143SB1-CRC 4GB

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

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Crucial Technology BL16G32C16S4B.M16FE 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Panram International Corporation M424051 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingmax Semiconductor KLDE88F-B8KU5 2GB

Kingmax Semiconductor KLDE88F-B8KU5 2GB