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Samsung M471A5244CB0-CWE 4GB
Corsair CMD8GX4M2B3600C18 4GB

Samsung M471A5244CB0-CWE 4GB vs Corsair CMD8GX4M2B3600C18 4GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Corsair CMD8GX4M2B3600C18 4GB 需要考虑的原因
Corsair CMD8GX4M2B3600C18 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 38
    左右 -73% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Corsair CMD8GX4M2B3600C18 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 22
  • 读取速度，GB/s
    15.5 left arrow 18.1
  • 写入速度，GB/s
    12.0 left arrow 14.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 3010

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD8GX4M2B3600C18 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471A5244CB0-CWE 4GB
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Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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