Samsung M471A5244CB0-CWE 4GB vs Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 15.4

测试中的平均数值
更快的写入速度，GB/s

12.0 11.9

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 -52% 更低的延时

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 25
读取速度，GB/s

15.5 15.4
写入速度，GB/s

12.0 11.9
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2283 2635

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5471-030.A00LF 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK8GX4M2B4133C19 4GB

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Crucial Technology CT8G4SFS824A.C8FHD1 8GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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G Skill Intl F4-3000C14-8GVR 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

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G Skill Intl F4-3000C15-8GRRB 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

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