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Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3400C16-8GTZ 8GB

Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-3400C16-8GTZ 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-3400C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3400C16-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3400C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 29
  • 读取速度，GB/s
    15.5 left arrow 18.9
  • 写入速度，GB/s
    12.0 left arrow 15.0
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 3466

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3400C16-8GTZ 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-CK0 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3400C16-8GTZ 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT16GX4M2C3200C14 8GB
Corsair CMT16GX4M2C3200C14 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5773DH0-YK0 2GB
Samsung M471B5773DH0-YK0 2GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMSX64GX4M2A2933C19 32GB
Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905702-019.A00G 8GB
Kingston 9905702-019.A00G 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston KHX3200C16D4/16GX 16GB
Kingston KHX3200C16D4/16GX 16GB
内存RAM
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM