Samsung M471A5244CB0-CWE 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 -46% 更低的延时
更快的读取速度，GB/s

16.8 15.5

测试中的平均数值
更快的写入速度，GB/s

13.5 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 26
读取速度，GB/s

15.5 16.8
写入速度，GB/s

12.0 13.5
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2283 2880

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

SK Hynix HMA84GR7AFR4N-VK 32GB

SK Hynix HMA84GR7AFR4N-VK 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB