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Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Samsung M471A5244CB0-CWE 4GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 86
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
InnoDisk Corporation M4S0-4GSSNCSJ 4GB 需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 86
  • 读取速度，GB/s
    15.5 left arrow 12.1
  • 写入速度，GB/s
    12.0 left arrow 5.7
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 1220

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M471A5244CB0-CWE 4GB
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InnoDisk Corporation M4S0-4GSSNCSJ 4GB
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内存RAM
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内存RAM
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Crucial Technology CT16G4SFD8213.C16FBR 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
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内存RAM
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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