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Samsung M471A5244CB0-CWE 4GB
Kingston 9905630-007.A00G 8GB

Samsung M471A5244CB0-CWE 4GB vs Kingston 9905630-007.A00G 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 9.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Kingston 9905630-007.A00G 8GB 需要考虑的原因
Kingston 9905630-007.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 -41% 更低的延时

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Kingston 9905630-007.A00G 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 27
  • 读取速度，GB/s
    15.5 left arrow 14.2
  • 写入速度，GB/s
    12.0 left arrow 9.9
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2387

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905630-007.A00G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905630-007.A00G 8GB
Kingston 9905630-007.A00G 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M386A8K40BMB-CPB 64GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK128GX4M8X3800C19 16GB
Corsair CMK128GX4M8X3800C19 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
Kingston 99P5474-013.A00LF 4GB
Kingston 99P5474-013.A00LF 4GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Corsair CMT32GX4M2C3466C16 16GB
Corsair CMT32GX4M2C3466C16 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
内存RAM