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Samsung M471A5244CB0-CWE 4GB
Kingston 99U5702-094.A00G 8GB

Samsung M471A5244CB0-CWE 4GB vs Kingston 99U5702-094.A00G 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Kingston 99U5702-094.A00G 8GB

Kingston 99U5702-094.A00G 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 14.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston 99U5702-094.A00G 8GB 需要考虑的原因
Kingston 99U5702-094.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 38
    左右 -19% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Kingston 99U5702-094.A00G 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 32
  • 读取速度，GB/s
    15.5 left arrow 14.8
  • 写入速度，GB/s
    12.0 left arrow 12.5
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2997

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 99U5702-094.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 99U5702-094.A00G 8GB
Kingston 99U5702-094.A00G 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Corsair CMD16GX4M2B3866C18 8GB
Corsair CMD16GX4M2B3866C18 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Maxsun MSD48G32Q3 8GB
Maxsun MSD48G32Q3 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9932291-002.A00G 4GB
Kingston 9932291-002.A00G 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2133C15-8GRS 8GB
G Skill Intl F4-2133C15-8GRS 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9905700-024.A00G 8GB
Kingston 9905700-024.A00G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
内存RAM