RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
比较
Samsung M471A5244CB0-CWE 4GB vs Micron Technology 18ASF2G72PDZ-2G3D1 16GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
低于PassMark测试中的延时,ns
38
39
左右 3% 更低的延时
更快的读取速度,GB/s
15.5
8.7
测试中的平均数值
更快的写入速度,GB/s
12.0
6.2
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
报告一个错误
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
39
读取速度,GB/s
15.5
8.7
写入速度,GB/s
12.0
6.2
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2283
1842
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Samsung M471A1K43CB1-CRCR 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-3200C16-16GFX 16GB
Hexon Technology Pte Ltd HEXON 1GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston CBD32D4S2D8HD-16 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Apacer Technology GD2.1542WS.001 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TA48G30S815GK 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Samsung M471B5773DH0-CK0 2GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C15-16GVK 16GB
Unifosa Corporation HU564404EP0200 4GB
Roa Logic BV iGame DDR4 8G 3000 8GB
A-DATA Technology DDR3 1333G 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
报告一个错误
×
Bug description
Source link