Samsung M471A5244CB0-CWE 4GB vs SK Hynix HMA81GS6JJR8N-VK 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的写入速度，GB/s

12.0 11.9

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

SK Hynix HMA81GS6JJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

15.7 15.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

SK Hynix HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

15.5 15.7
写入速度，GB/s

12.0 11.9
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2283 2803

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D26BFST.16FD 16GB

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Maxsun MSD416G26Q3 16GB

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Corsair CM4S16GL3200K18K2 16GB

Corsair CM4S16GL3200K18K2 16GB

Corsair CMK32GX4M2E3200C16 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CM4B8G2J2133A15S 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 9965525-140.A00LF 8GB

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G Skill Intl F4-3200C16-8GVK 8GB

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Kingston HX318C10FK/4 4GB

Corsair CMK32GX4M4B3466C16 8GB

Corsair CMK32GX4M4B3466C16 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMK32GX4M2Z2400C16 16GB

Corsair CMK32GX4M2Z2400C16 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB