Samsung M471B1G73DB0-YK0 8GB vs Crucial Technology BL8G32C16U4B.8FE 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Crucial Technology BL8G32C16U4B.8FE 8GB

Crucial Technology BL8G32C16U4B.8FE 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

Crucial Technology BL8G32C16U4B.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 -45% 更低的延时
更快的读取速度，GB/s

19.1 11.9

测试中的平均数值
更快的写入速度，GB/s

14.4 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology BL8G32C16U4B.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 31
读取速度，GB/s

11.9 19.1
写入速度，GB/s

8.1 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2077 3363

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4B3600C18 8GB

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Crucial Technology BL16G32C16U4W.16FE 16GB

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Corsair CMK64GX4M8A2133C13 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Corsair CMW32GX4M4K4000C19 8GB

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A-DATA Technology AO2P21FC8R2-BRGS 8GB

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Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

Corsair CMW64GX4M4D3600C18 16GB

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Kingston 99U5584-007.A00LF 4GB

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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

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Samsung M378A4G43AB2-CWE 32GB

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