Samsung M471B1G73DB0-YK0 8GB vs G Skill Intl F4-3200C16-8GVK 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

G Skill Intl F4-3200C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 -45% 更低的延时
更快的读取速度，GB/s

17.9 11.9

测试中的平均数值
更快的写入速度，GB/s

13.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3200C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 31
读取速度，GB/s

11.9 17.9
写入速度，GB/s

8.1 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2077 3261

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112S64CP6-S6 1GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Kingston 9905403-090.A01LF 4GB

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G Skill Intl F4-3300C16-16GTZ 16GB

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Corsair CMR32GX4M4C3200C16 8GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

Kingston 9905474-019.A00LF 2GB

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Micron Technology 16G3200CL22 16GB

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Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Corsair CMK16GX4M4A2400C14 4GB

Corsair CMK16GX4M4A2400C14 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 99U5700-032.A00G 16GB

Kingston 99U5700-032.A00G 16GB