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Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3733C17-4GVK 4GB

Samsung M471B1G73DB0-YK0 8GB vs G Skill Intl F4-3733C17-4GVK 4GB

总分
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分
star star star star star
G Skill Intl F4-3733C17-4GVK 4GB

G Skill Intl F4-3733C17-4GVK 4GB

差异 规格 评论

差异

Samsung M471B1G73DB0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
G Skill Intl F4-3733C17-4GVK 4GB 需要考虑的原因
G Skill Intl F4-3733C17-4GVK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 45
    左右 -114% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3733C17-4GVK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 21
  • 读取速度，GB/s
    11.9 left arrow 19.0
  • 写入速度，GB/s
    8.1 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2077 left arrow 3216

Samsung M471B1G73DB0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB

G Skill Intl F4-3733C17-4GVK 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
AMD R5S38G1601U2S 8GB
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内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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Nanya Technology M2F4G64CB8HG5N-CG 4GB
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内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
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内存RAM
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内存RAM
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G Skill Intl F4-4133C19-8GTZKKF 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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