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Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
比较
Samsung M471B1G73DB0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
总分
Samsung M471B1G73DB0-YK0 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
更快的读取速度,GB/s
11.9
8.9
测试中的平均数值
更快的写入速度,GB/s
8.1
7.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
报告一个错误
低于PassMark测试中的延时,ns
41
45
左右 -10% 更低的延时
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
41
读取速度,GB/s
11.9
8.9
写入速度,GB/s
8.1
7.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2077
2126
Samsung M471B1G73DB0-YK0 8GB RAM的比较
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB RAM的比较
A-DATA Technology DQVE1908 512MB
Crucial Technology CT51264BD160B.C16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73DB0-YK0 8GB
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Qimonda 64T128020EDL2.5C2 1GB
Kingston 9905599-026.A00G 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Samsung M378B5773DH0-CH9 2GB
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Kingston KVR533D2N4 512MB
SK Hynix HMA82GU6MFR8N-TF 16GB
Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378B5673FH0-CH9 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
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AMD R5S38G1601U2S 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Corsair CMX4GX3M2A1600C9 2GB
Maxsun MSD44G24Q0 4GB
报告一个错误
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