Samsung M471B1G73DB0-YK0 8GB vs Kingston 9905678-023.A00G 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Kingston 9905678-023.A00G 8GB

Kingston 9905678-023.A00G 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

Kingston 9905678-023.A00G 8GB

需要考虑的原因
Kingston 9905678-023.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 45

左右 -32% 更低的延时
更快的读取速度，GB/s

14.7 11.9

测试中的平均数值
更快的写入速度，GB/s

9.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Kingston 9905678-023.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 34
读取速度，GB/s

11.9 14.7
写入速度，GB/s

8.1 9.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2077 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3400C16-16GTZ 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M471B1G73DB0-YK0 8GB

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Kingston 9905678-023.A00G 8GB

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Kingston XK2M26-MIE 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Corsair CMK128GX4M8X3600C18 16GB

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PUSKILL DDR3 1600 8G 8GB

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Patriot Memory (PDP Systems) PSD416G26662 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BL4G24C16U4B.8FE 4GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK16GX4M2K4133C19 8GB

Corsair CMK16GX4M2K4133C19 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

Samsung M471B1G73QH0-YK0 8GB

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G Skill Intl F4-4266C19-8GTRS 8GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB