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Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA451S6AFR8N-TF 4GB

Samsung M471B1G73DB0-YK0 8GB vs SK Hynix HMA451S6AFR8N-TF 4GB

总分
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分
star star star star star
SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

差异 规格 评论

差异

Samsung M471B1G73DB0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
SK Hynix HMA451S6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451S6AFR8N-TF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 45
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA451S6AFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 37
  • 读取速度，GB/s
    11.9 left arrow 13.9
  • 写入速度，GB/s
    8.1 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2077 left arrow 2191

Samsung M471B1G73DB0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB

SK Hynix HMA451S6AFR8N-TF 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
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InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
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内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM
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Samsung M471B5773EB0-CK0 2GB
Corsair CMK4GX4M1A2400C14 4GB
Corsair CMK4GX4M1A2400C14 4GB
内存RAM
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Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3600C15-8GTZ 8GB
G Skill Intl F4-3600C15-8GTZ 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
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G Skill Intl F4-2800C15-8GVR 8GB
G Skill Intl F4-2800C15-8GVR 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMU32GX4M2A2666C16 16GB
Corsair CMU32GX4M2A2666C16 16GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
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Kingston 9905743-034.A00G 8GB
内存RAM
Kingston 9905458-020.A00LF 4GB
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Corsair CMK16GX4M4C3200C15 4GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingston KHX2133C13D4/8GX 8GB
Kingston KHX2133C13D4/8GX 8GB
内存RAM