Samsung M471B1G73DB0-YK0 8GB vs V-GEN D4H8GL36A8TXV 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 53

左右 15% 更低的延时

V-GEN D4H8GL36A8TXV 8GB

需要考虑的原因
V-GEN D4H8GL36A8TXV 8GB

报告一个错误

更快的读取速度，GB/s

20 11.9

测试中的平均数值
更快的写入速度，GB/s

9.4 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

V-GEN D4H8GL36A8TXV 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 53
读取速度，GB/s

11.9 20.0
写入速度，GB/s

8.1 9.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2077 2366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston 99U5471-020.A00LF 4GB

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Crucial Technology CT8G4DFS824A.M8FR 8GB

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Kingston 9965433-406.A00LF 8GB

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AMD R9S48G3206U2S 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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G Skill Intl F4-4000C16-16GVKA 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingston 9905678-041.A00G 4GB

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Kingston 9905625-036.A00G 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-3200C14-8GTZSW 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB