Samsung M471B1G73EB0-YK0 8GB vs Crucial Technology BL8G32C16U4WL.8FE 8GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

Crucial Technology BL8G32C16U4WL.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 -84% 更低的延时
更快的读取速度，GB/s

17.2 12.2

测试中的平均数值
更快的写入速度，GB/s

14.6 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 25
读取速度，GB/s

12.2 17.2
写入速度，GB/s

7.9 14.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2072 3414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 9905403-447.A00LF 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Patriot Memory (PDP Systems) 2133 C14 Series 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CMK16GX4M4B3200C15 4GB

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PNY Electronics PNY 2GB

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Maxsun MSD44G24Q3 4GB

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Kingston 99U5700-014.A00G 8GB

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Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Kingston 9932301-P01.A00G 4GB

Kingston 9932301-P01.A00G 4GB