Samsung M471B1G73EB0-YK0 8GB vs Kingston KF2666C16S4/16G 16GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

Kingston KF2666C16S4/16G 16GB

Kingston KF2666C16S4/16G 16GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

Kingston KF2666C16S4/16G 16GB

需要考虑的原因
Kingston KF2666C16S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 46

左右 -10% 更低的延时
更快的读取速度，GB/s

12.7 12.2

测试中的平均数值
更快的写入速度，GB/s

10.9 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

Kingston KF2666C16S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 42
读取速度，GB/s

12.2 12.7
写入速度，GB/s

7.9 10.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2072 2715

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C13D4/4GX 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Samsung 1600 CL10 Series 8GB

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Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB