Samsung M471B1G73QH0-YK0 8GB vs Avant Technology W641GU42J5213NC 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Avant Technology W641GU42J5213NC 8GB

Avant Technology W641GU42J5213NC 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Avant Technology W641GU42J5213NC 8GB

需要考虑的原因
Avant Technology W641GU42J5213NC 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

15.9 11.8

测试中的平均数值
更快的写入速度，GB/s

11.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Avant Technology W641GU42J5213NC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

11.8 15.9
写入速度，GB/s

8.0 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 2813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD64GX4M8X4000C19 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Eudar Technology Inc. 8GXMP3000CL16 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston 99U5469-045.A00LF 4GB

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Kingston K531R8-MIN 4GB

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Patriot Memory (PDP Systems) 2400 C15 Series 4GB

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Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

Samsung M393B5170FH0-CH9 4GB

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Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB