Samsung M471B1G73QH0-YK0 8GB vs Chun Well Technology Holding Limited D4U0836144B 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Chun Well Technology Holding Limited D4U0836144B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0836144B 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 47

左右 -147% 更低的延时
更快的读取速度，GB/s

16.4 11.8

测试中的平均数值
更快的写入速度，GB/s

14.9 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 19
读取速度，GB/s

11.8 16.4
写入速度，GB/s

8.0 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2061 3521

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMD64GX4M8B2800C14 8GB

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G Skill Intl F4-4000C18-16GVK 16GB

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Kingston 9905316-106.A02LF 1GB

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Mushkin MR[A/B]4U320GJJM8G 8GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston KHX2133C14/16G 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Corsair CMK16GX4M2Z3600C14 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Kingston 9905403-090.A01LF 4GB

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G Skill Intl F4-4600C18-8GTRS 8GB

Essencore Limited KD48GU88C-26N1600 8GB

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