Samsung M471B1G73QH0-YK0 8GB vs Corsair CMD16GX4M4B3000C15 4GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Corsair CMD16GX4M4B3000C15 4GB

Corsair CMD16GX4M4B3000C15 4GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Corsair CMD16GX4M4B3000C15 4GB

需要考虑的原因
Corsair CMD16GX4M4B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 47

左右 -38% 更低的延时
更快的读取速度，GB/s

15.3 11.8

测试中的平均数值
更快的写入速度，GB/s

11.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Corsair CMD16GX4M4B3000C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 34
读取速度，GB/s

11.8 15.3
写入速度，GB/s

8.0 11.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 2960

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Samsung M471A2K43CB1-CRCR 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

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Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB