Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BLS16G4D240FSE.16FBD 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology BLS16G4D240FSE.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 47

左右 -34% 更低的延时
更快的读取速度，GB/s

15.4 11.8

测试中的平均数值
更快的写入速度，GB/s

9.9 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 35
读取速度，GB/s

11.8 15.4
写入速度，GB/s

8.0 9.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2061 2765

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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PUSKILL DDR3 1600 8G 8GB

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Kingston KV0M5R-MIE 8GB

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AMD R538G1601U2S-UO 8GB

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Kingston 99U5734-014.A00G 16GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Corsair CMV4GX3M1C1600C11 4GB

Corsair CMV4GX3M1C1600C11 4GB

Kingston HP37D4U1S8ME-8X 8GB

Kingston HP37D4U1S8ME-8X 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99P5723-006.A00G 8GB

Kingston 99P5723-006.A00G 8GB