Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology CT8G4SFS824A.C8FAD1 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FAD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的读取速度，GB/s

14.8 11.8

测试中的平均数值
更快的写入速度，GB/s

9.6 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

11.8 14.8
写入速度，GB/s

8.0 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2061 2437

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Kingston 9965525-155.A00LF 8GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16GB

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Corsair CMWX16GC3000C15W4 16GB

Corsair CMWX16GC3000C15W4 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M393B2G70BH0-YK0 16GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB