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Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2133C15-8GFXR 8GB

Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-2133C15-8GFXR 8GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
G Skill Intl F4-2133C15-8GFXR 8GB 需要考虑的原因
G Skill Intl F4-2133C15-8GFXR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 47
    左右 -114% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 22
  • 读取速度，GB/s
    11.8 left arrow 18.5
  • 写入速度，GB/s
    8.0 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3261

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

G Skill Intl F4-2133C15-8GFXR 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C15-8GRKB 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology CB4GU2400.M8E 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Corsair CM4X8GF2666C18S2 8GB
Corsair CM4X8GF2666C18S2 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology AFLD416EH1P 16GB
Micron Technology AFLD416EH1P 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM