Samsung M471B1G73QH0-YK0 8GB vs G Skill Intl F4-4000C19-8GTZSW 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

G Skill Intl F4-4000C19-8GTZSW 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

G Skill Intl F4-4000C19-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4000C19-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的读取速度，GB/s

19.4 11.8

测试中的平均数值
更快的写入速度，GB/s

15.5 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

11.8 19.4
写入速度，GB/s

8.0 15.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 3515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR16GX4M2C3000C15 8GB

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Kingston KHX2133C11D3/4GX 4GB

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Essencore Limited KD4AGS88C-26N1900 16GB

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Apacer Technology 76.D305G.D060B 16GB

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Kingston 9905403-134.A00LF 2GB

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Crucial Technology CB8GS2400.C8ET 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Crucial Technology CT16G4SFD824A.M16FR 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology BLS8G4D240FSC.16FARG 8GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Corsair CMW16GX4M2C3200C16 8GB

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