Samsung M471B1G73QH0-YK0 8GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 47

左右 -236% 更低的延时
更快的读取速度，GB/s

26.4 11.8

测试中的平均数值
更快的写入速度，GB/s

19.8 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 14
读取速度，GB/s

11.8 26.4
写入速度，GB/s

8.0 19.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 4362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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ADVAN Inc AM42E28UD04T-NVL 4GB

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Kingston KHX1600C9D3/4G 4GB

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Ramaxel Technology RMSA3270MB86H9F2400 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.C1GM3.C7Z0B 8GB

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Kingston K1N7HK-ELC 2GB

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Crucial Technology BL8G32C16U4R.M8FE1 8GB

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

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G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB