Samsung M471B1G73QH0-YK0 8GB vs Gloway International (HK) STKD4XMP2400-F 4GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Gloway International (HK) STKD4XMP2400-F 4GB

需要考虑的原因
Gloway International (HK) STKD4XMP2400-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 47

左右 -88% 更低的延时
更快的读取速度，GB/s

15.2 11.8

测试中的平均数值
更快的写入速度，GB/s

11.4 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Gloway International (HK) STKD4XMP2400-F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 25
读取速度，GB/s

11.8 15.2
写入速度，GB/s

8.0 11.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 2400 C17 8GB

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Kingston 9905471-006.A01LF 4GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

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G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB