Samsung M471B1G73QH0-YK0 8GB vs Kingston HP26D4S9D8MJ-16 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Kingston HP26D4S9D8MJ-16 16GB

Kingston HP26D4S9D8MJ-16 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 119

左右 61% 更低的延时
更快的读取速度，GB/s

11.8 1.8

测试中的平均数值
更快的写入速度，GB/s

8.0 2.0

测试中的平均数值

Kingston HP26D4S9D8MJ-16 16GB

需要考虑的原因
Kingston HP26D4S9D8MJ-16 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Kingston HP26D4S9D8MJ-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 119
读取速度，GB/s

11.8 1.8
写入速度，GB/s

8.0 2.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2061 447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston X5H5PW-MIB 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Corsair CM4B4G1J2400A14K 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB