Samsung M471B1G73QH0-YK0 8GB vs SK Hynix HMA82GR7MFR8N-UH 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 57

左右 18% 更低的延时
更快的读取速度，GB/s

11.8 9.3

测试中的平均数值
更快的写入速度，GB/s

8.0 7.8

测试中的平均数值

SK Hynix HMA82GR7MFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GR7MFR8N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

SK Hynix HMA82GR7MFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 57
读取速度，GB/s

11.8 9.3
写入速度，GB/s

8.0 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2061 2233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 16ATF4G64HZ-3G2E2 32GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston HP698651-154-MCN 8GB

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Crucial Technology BL16G32C16S4B.M8FB1 16GB

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AMD R538G1601U2S-UO 8GB

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G Skill Intl F4-2133C15-16GIS 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMR32GX4M4C3333C16 8GB

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Kingston KP4T2F-PSB 4GB

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SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2800C16-8GRR 8GB

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Kingston 9965525-018.A00LF 4GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Kingston 9905700-017.A00G 8GB