Samsung M471B5173BH0-CK0 4GB vs G Skill Intl F4-2933C14-8GTZRX 8GB

总分

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

总分

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

差异规格评论

差异

Samsung M471B5173BH0-CK0 4GB

需要考虑的原因
Samsung M471B5173BH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 54

左右 22% 更低的延时

G Skill Intl F4-2933C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-2933C14-8GTZRX 8GB

报告一个错误

更快的读取速度，GB/s

17.5 12

测试中的平均数值
更快的写入速度，GB/s

9.3 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173BH0-CK0 4GB

G Skill Intl F4-2933C14-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 54
读取速度，GB/s

12.0 17.5
写入速度，GB/s

7.2 9.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1933 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX8GX4M2A2400C16 4GB

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Avant Technology F641GU67F9333G 8GB

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Avant Technology W6451U48J7240N6 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Micron Technology 72ASS4G72LZ-2G1A1 32GB

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Samsung M471A1G43EB1-CRC 8GB

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