Samsung M471B5173BH0-CK0 4GB vs Samsung M471B5173EB0-YK0 4GB

总分

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

总分

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

差异规格评论

差异

Samsung M471B5173BH0-CK0 4GB

需要考虑的原因
Samsung M471B5173BH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 44

左右 5% 更低的延时

Samsung M471B5173EB0-YK0 4GB

需要考虑的原因
Samsung M471B5173EB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

13 12

测试中的平均数值
更快的写入速度，GB/s

8.2 7.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173EB0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 44
读取速度，GB/s

12.0 13.0
写入速度，GB/s

7.2 8.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1933 2069

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK16GX4M4B3200C15 4GB

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Kingston 9905469-143.A00LF 4GB

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Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

G Skill Intl F3-1866C8-8GTX 8GB

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Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB