Samsung M471B5173BH0-CK0 4GB vs Kingston 99U5428-040.A01LF 4GB

总分

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

总分

Kingston 99U5428-040.A01LF 4GB

Kingston 99U5428-040.A01LF 4GB

差异规格评论

差异

Samsung M471B5173BH0-CK0 4GB

需要考虑的原因
Samsung M471B5173BH0-CK0 4GB

报告一个错误

更快的读取速度，GB/s

12 11.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Kingston 99U5428-040.A01LF 4GB

需要考虑的原因
Kingston 99U5428-040.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 -50% 更低的延时
更快的写入速度，GB/s

7.8 7.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5173BH0-CK0 4GB

Kingston 99U5428-040.A01LF 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 28
读取速度，GB/s

12.0 11.2
写入速度，GB/s

7.2 7.8
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1933 1759

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kingston 9965669-027.A00G 16GB

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Avexir Technologies Corporation T-20181206 8GB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

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Corsair CMK64GX4M4D3600C18 16GB

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Kingston ACR256X64D3S1333C9 2GB

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Kingston 99U5428-040.A01LF 4GB

Kingston 99U5428-040.A01LF 4GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Kingston MSI32D4S2S1ME-8 8GB

Kingston MSI32D4S2S1ME-8 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB