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Samsung M471B5173CB0-YK0 4GB
Kingston KF548C38-16 16GB

Samsung M471B5173CB0-YK0 4GB vs Kingston KF548C38-16 16GB

总分
star star star star star
Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

总分
star star star star star
Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

差异 规格 评论

差异

Samsung M471B5173CB0-YK0 4GB 需要考虑的原因
Samsung M471B5173CB0-YK0 4GB
报告一个错误
Kingston KF548C38-16 16GB 需要考虑的原因
Kingston KF548C38-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 42
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173CB0-YK0 4GB
Kingston KF548C38-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR5
  • PassMark中的延时，ns
    42 left arrow 29
  • 读取速度，GB/s
    11.9 left arrow 14.8
  • 写入速度，GB/s
    7.9 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 38
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    1979 left arrow 3319

Samsung M471B5173CB0-YK0 4GB RAM的比较

Kingston HP16D3LS1KBGH/4G 4GB
AMD R538G1601S2LS 8GB

Kingston KF548C38-16 16GB RAM的比较

Kingston KF560C40-16 16GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173CB0-YK0 4GB
Samsung M471B5173CB0-YK0 4GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4266C17-16GTRGB 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMD16GX4M2B3000C15 8GB
Corsair CMD16GX4M2B3000C15 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905630-052.A00G 16GB
Kingston 9905630-052.A00G 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3866C18-8GTZSW 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM