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Samsung M471B5173DB0-YK0 4GB
Corsair CMT64GX4M8Z3600C16 8GB

Samsung M471B5173DB0-YK0 4GB vs Corsair CMT64GX4M8Z3600C16 8GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Corsair CMT64GX4M8Z3600C16 8GB

Corsair CMT64GX4M8Z3600C16 8GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Corsair CMT64GX4M8Z3600C16 8GB 需要考虑的原因
Corsair CMT64GX4M8Z3600C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 45
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Corsair CMT64GX4M8Z3600C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 34
  • 读取速度，GB/s
    12.0 left arrow 17.4
  • 写入速度，GB/s
    7.8 left arrow 16.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 3187

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Corsair CMT64GX4M8Z3600C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT32GX4M4K4000C19 8GB
Corsair CMT32GX4M4K4000C19 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CM4X16GC3000C16K8 16GB
Corsair CM4X16GC3000C16K8 16GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM