Samsung M471B5173DB0-YK0 4GB vs Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

需要考虑的原因
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 -73% 更低的延时
更快的读取速度，GB/s

18.8 12

测试中的平均数值
更快的写入速度，GB/s

15.6 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 26
读取速度，GB/s

12.0 18.8
写入速度，GB/s

7.8 15.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 3733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology AFSD416ES1P 16GB

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Golden Empire CL14-16-16 D4-3000 4GB

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Corsair CMSX8GX4M2A2400C16 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

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Samsung M471B5273CH0-CH9 4GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905665-021.A00G 4GB

Kingston 9905665-021.A00G 4GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston 99U5723-002.A00G 8GB

Kingston 99U5723-002.A00G 8GB