Samsung M471B5173DB0-YK0 4GB vs G Skill Intl F4-2800C16-4GRK 4GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

G Skill Intl F4-2800C16-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2800C16-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 45

左右 -18% 更低的延时
更快的读取速度，GB/s

14.4 12

测试中的平均数值
更快的写入速度，GB/s

11.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-2800C16-4GRK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 38
读取速度，GB/s

12.0 14.4
写入速度，GB/s

7.8 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 2856

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905471-001.A01LF 2GB

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Kingston KVR533D2N4 512MB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Corsair CMSX32GX4M2A3200C22 16GB

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Samsung M378B5173BH0-CH9 4GB

Corsair CMK16GX4M2K4133C19 8GB

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Kingston 99U5458-008.A00LF 4GB

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AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CM4B8G7L2666A16K2-O 8GB

Corsair CM4B8G7L2666A16K2-O 8GB