RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
比较
Samsung M471B5173DB0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
45
左右 -88% 更低的延时
更快的读取速度,GB/s
16
12
测试中的平均数值
更快的写入速度,GB/s
10.8
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
24
读取速度,GB/s
12.0
16.0
写入速度,GB/s
7.8
10.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1939
2731
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMR16GX4M2Z3200C16 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CB16GS2666.C8ET 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905630-048.A00G 16GB
Kingston 99U5474-038.A00LF 4GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M393A1G40DB0-B`B 8GB
AMD AE34G1601U1 4GB
Corsair CMW32GX4M4C3000C15 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905712-010.A00G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston KF2666C16D4/8G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905598-028.A00G 8GB
报告一个错误
×
Bug description
Source link