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Samsung M471B5173DB0-YK0 4GB
Kingston 9905663-008.A00G 16GB
比较
Samsung M471B5173DB0-YK0 4GB vs Kingston 9905663-008.A00G 16GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Kingston 9905663-008.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
需要考虑的原因
Kingston 9905663-008.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
45
左右 -29% 更低的延时
更快的读取速度,GB/s
14.7
12
测试中的平均数值
更快的写入速度,GB/s
11.5
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Kingston 9905663-008.A00G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
35
读取速度,GB/s
12.0
14.7
写入速度,GB/s
7.8
11.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1939
2815
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Kingston 9905663-008.A00G 16GB RAM的比较
PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMSX4GX3M1A1600C9 4GB
Kingston 9905734-022.A00G 16GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905663-008.A00G 16GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK16GX4M1A2400C14 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905630-033.A00G 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMT32GX4M2D3600C18 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4400C19-32GTZR 32GB
Apacer Technology 78.A1GC6.9H10C 2GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2400C15-4GNT 4GB
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F4-2133C15-4GRR 4GB
Samsung 1600 CL10 Series 8GB
Kingston 9905700-053.A00G 8GB
Corsair CML8GX3M2A1600C9 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD44G213341 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Transcend Information TS2GSH64V1B 16GB
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Bug description
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