Samsung M471B5173DB0-YK0 4GB vs Kingston 9932301-P01.A00G 4GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Kingston 9932301-P01.A00G 4GB

Kingston 9932301-P01.A00G 4GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Kingston 9932301-P01.A00G 4GB

需要考虑的原因
Kingston 9932301-P01.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 45

左右 -125% 更低的延时
更快的读取速度，GB/s

19.9 12

测试中的平均数值
更快的写入速度，GB/s

14.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Kingston 9932301-P01.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 20
读取速度，GB/s

12.0 19.9
写入速度，GB/s

7.8 14.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

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