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Samsung M471B5173DB0-YK0 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
比较
Samsung M471B5173DB0-YK0 4GB vs Micron Technology 36ASF2G72PZ-2G3A3 16GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Micron Technology 36ASF2G72PZ-2G3A3 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12
9.8
测试中的平均数值
需要考虑的原因
Micron Technology 36ASF2G72PZ-2G3A3 16GB
报告一个错误
低于PassMark测试中的延时,ns
37
45
左右 -22% 更低的延时
更快的写入速度,GB/s
7.9
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
37
读取速度,GB/s
12.0
9.8
写入速度,GB/s
7.8
7.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1939
2229
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB RAM的比较
SK Hynix HYMP112U64CP8-S5 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CE6 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Kingston 99U5474-026.A00LF 4GB
Kingston KHX2400C15S4/8G 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2400C16-8GIS 8GB
Samsung M393B1K70CH0-YH9 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston KTC1G-UDIMM 1GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Corsair CMR32GX4M4C3000C15 8GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905743-044.A00G 16GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Avant Technology W641GU42J5213N3 8GB
报告一个错误
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Bug description
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