Samsung M471B5173DB0-YK0 4GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

报告一个错误

低于PassMark测试中的延时，ns

39 45

左右 -15% 更低的延时
更快的读取速度，GB/s

15.1 12

测试中的平均数值
更快的写入速度，GB/s

12.6 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 39
读取速度，GB/s

12.0 15.1
写入速度，GB/s

7.8 12.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1939 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL16-18-18 D4-3000 16GB

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Kingston 99U5471-030.A00LF 8GB

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Mushkin 991988 (996988) 4GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Corsair CMK16GX4M2K4133C19 8GB

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Kingston 9905471-002.A00LF 2GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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Crucial Technology CT8G3S186DM.M16FP 8GB

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Kingston KF3600C16D4/16GX 16GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB