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Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Samsung M471B5173QH0-YK0 4GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 45
    左右 -61% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 28
  • 读取速度，GB/s
    12.3 left arrow 18.5
  • 写入速度，GB/s
    8.0 left arrow 15.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3601

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
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内存RAM
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