RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
比较
Samsung M471B5173QH0-YK0 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
报告一个错误
低于PassMark测试中的延时,ns
37
45
左右 -22% 更低的延时
更快的读取速度,GB/s
16.9
12.3
测试中的平均数值
更快的写入速度,GB/s
13.8
8.0
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
37
读取速度,GB/s
12.3
16.9
写入速度,GB/s
8.0
13.8
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1992
3170
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMV32GX4M1A2666C18 32GB
Samsung M471B5173QH0-YK0 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Kingston KP223C-ELD 2GB
Kingston 9905702-002.A00G 8GB
Team Group Inc. Team-Value-800 2GB
Essencore Limited KD48GU880-32A160X 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9965589-035.D00G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905702-008.A00G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMW32GX4M2Z2933C16 16GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CM4X8GF2400C14K4 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
Kingston 9905403-156.A00LF 2GB
Kingston 99U5704-001.A00G 4GB
报告一个错误
×
Bug description
Source link