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Samsung M471B5173QH0-YK0 4GB
Corsair CM4X4GF2133C15S2 4GB

Samsung M471B5173QH0-YK0 4GB vs Corsair CM4X4GF2133C15S2 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Corsair CM4X4GF2133C15S2 4GB 需要考虑的原因
Corsair CM4X4GF2133C15S2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Corsair CM4X4GF2133C15S2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 30
  • 读取速度，GB/s
    12.3 left arrow 17.3
  • 写入速度，GB/s
    8.0 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2190

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Corsair CM4X4GF2133C15S2 4GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CM4X4GF2133C15S2 4GB
Corsair CM4X4GF2133C15S2 4GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMD16GX4M2A2666C15 8GB
Corsair CMD16GX4M2A2666C15 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CMD16GX4M4B3000C14 4GB
Corsair CMD16GX4M4B3000C14 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM